PART |
Description |
Maker |
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFC36V7785A_04 MGFC36V7785A |
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS44V273598 MGFS44V2735_98 MGFS44V2735 |
2.7-3.5GHz BAND 25W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC47A7785 |
7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC39V7785A C397785A |
From old datasheet system 7.7 - 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NJG1553F-C4 NJG1553F-C7 NJG1553F-L6 NJG1553F-C3 NJ |
1.5GHz/1.9GHz Mixer GaAs MMIC(1.5GHz/1.9GHz砷化镓单片微波集成电路混频器(用于数字移动电话和PHS手机 1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
NJG1556KB2 |
1.5GHz/1.9GHz Mixer GaAs MMIC(用于1.5GHz/1.9GHz频带数字移动电话的砷化镓单片微波集成电路混频
|
New Japan Radio Co., Ltd.
|
ESLB-P540A ESLB-P540A-2 ESLB-P540A-1 |
4.9-5.9GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
ESLB-P540A-X |
4.9-5.9GHz Band Chip Multilayer Band Pass Filter
|
Hitachi
|
MGFK25V4045_03 MGFK25V4045 MGFK25V404503 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|